to ? 126 1. emitter 2. collect o r 3. base jiangsu changjiang electron ics technology co., l t d t o -126 plastic-encap sulate t r ansistors bd135 / bd 137 / bd 139 transistor (npn) features z high current z complement to bd136, bd138 and bd140 maximum ratings (t a =25 unless otherwise noted) symbol para mete r v alue unit v cbo coll ector-bas e voltage bd135 bd137 BD139 45 60 80 v v ceo coll ector-emitter v oltage bd135 bd137 BD139 45 60 80 v v ebo emitter-base voltage 5 v i c collector current 1.5 a p c collector power dissipation 1.25 w r ja thermal resistance from junction to ambient 100 / w t j junction temperature 150 t stg storage temperature -55~+150 equivalent circuit bd135 , bd137,BD139 ,!- o . solid dot = green moldi ng compou nd device, if none, the norm al device ///, ode ordering information part number package packing method pack quantity bd135 to-126 bulk bd137 to-126 BD139 to-126 bulk bd135 -tu to-126 tube bulk bd137 -tu to-126 tube BD139 -tu to-126 tube www.cj-elec.com 1 d , aug ,201 7 bd135 xxx bd13 7 xxx bd13 9 xxx 60pcs/tube 200pcs/bag 200pcs/bag 200pcs/bag 60pcs/tube 60pcs/tube
parameter symbol test conditions min typ max unit co llecto r-base breakdown voltage bd135 bd137 BD139 v (br)cb o i c = 0.1ma,i e =0 45 60 80 v co llecto r-emitter sustaining voltage bd135 bd137 BD139 v ceo( sus) * i c = 0 .03a,i b =0 45 60 80 v emitter-b a se breakdown voltage v ( br )ebo i e =0.1ma,i c =0 5 v co llecto r cut-off current i cb o v cb = 30v ,i e = 0 0.1 a emitter cut-off current i ebo v eb =5 v ,i c =0 10 a h fe(1) * v ce =2 v , i c = 150ma 40 250 h fe(2) * v ce =2 v , i c =5ma 25 dc cu rr ent gain h fe(3) * v ce =2 v , i c = 500ma 25 co llecto r-emitter saturation voltage v ce (sa t) * i c = 500ma,i b = 50ma 0.5 v base-emitter v o ltage v be * v ce =2 v , i c = 500ma 1 v *puls e test: pulse width 350 s, duty cycle 2.0%. classifica tion of h fe(1) r a nk 6 10 16 ra n ge 40-100 63-160 100-250 a t =25 unless otherwise specified www.cj-elec.com 2 d , aug,201 7
10 100 1000 0 50 100 150 200 250 300 350 400 450 500 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 1600 10 100 1000 400 500 600 700 800 900 1000 1100 1200 10 100 1000 0 50 100 150 200 250 300 350 0.0 0 .5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 400 600 800 1000 10 100 1000 v ce = 2v t a =100 o c t a =25 o c collector current i c (m a) dc current gain h fe i c h fe ?? 1500 co llect or power dissipation p c (mw) am bient temperature t a ( ) p c ? ? t a collector current i c (m a) base- emit ter saturation voltage v bes a t (mv) t a =25 t a =100 =10 i c v be sat ?? 1500 t a =25 t a =100 =10 v ce sat ? ? i c collector-emitter saturation vo lt age v ce s at (mv) collector current i c (m a) 1500 co mmon emitter t a =25 1ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma i b =0.1ma collector-em itter voltage v ce (v) collector current i c (a) s t atic characteristic vce=2v ta=25 ta=100 o c base- em itter voltage v be (mv ) collector current i c (m a ) i c ??v be 1500 typical characteristics www.cj-elec.com 3 d , aug,201 7
to-126 package outline dimensions min max min max a 2.500 2.900 0.098 0.114 a1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 d 7.400 7.800 0.291 0.307 e 10.600 11.000 0.417 0.433 e e1 4.480 4.680 0.176 0.184 h 0.000 0.300 0.000 0.012 l 15.300 15.700 0.602 0.618 l1 2.100 2.300 0.083 0.091 p 3.900 4.100 0.154 0.161 3.000 3.200 0.118 0.126 symbol dimensions in millimete rs dimensions in inches 2.290 typ 0.090 typ www.cj-elec.com 4 d ,aug,2017
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